Discrete Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are characterized by their lower parasitic parameters and single-chip design, enabling them to achieve even faster switching speeds. However, the rapid rate of change in voltage (dv/dt) and current (di/dt) can lead to overshoot and oscillation in both voltage and current, ultimately limiting the performance of high-frequency operations. To address this issue, this paper presents a high-switching-frequency motor controller that utilizes discrete SiC MOSFETs. To achieve a high switching frequency for the controller while minimizing current oscillation and voltage overshoot, a novel electronic system architecture is proposed. Additionally, a passive driving circuit is designed to suppress gate oscillation without the need for additional control circuits. A new printed circuit board (PCB) laminate stack featuring low parasitic inductance, high current conduction capacity, and efficient heat dissipation is also developed using advanced wiring technology and a specialized heat dissipation structure. Compared to traditional methods, the proposed circuit and bus design features a simpler structure, a higher power density, and achieves a 13% reduction in current overshoot, along with a 15.7% decrease in switching loss. The silicon carbide (SiC) controller developed from this research has successfully undergone double-pulse and power testing. The results indicate that the designed controller can operate reliably over extended periods at a switching frequency of 50 kHz, achieving a maximum efficiency of 98.2% and a power density of 9 kW/kg (10 kW/L). The switching frequency and quality density achieved by the controller have not been observed in previous studies. This controller is suitable for use in the development of new energy electrical systems.
Zhang et al. (Tue,) studied this question.