Channel length dependence of THz radiation detection in photovoltaic Si MOSFET: Modeling and simulation

Despite the advantages of terahertz (THz) radiation detection using semiconductor field-effect transistors, it has not shown a strong enough response compared to other competing technologies. Therefore, it is important to improve our understanding of the field-effect transistor (FET) operation as a THz detector. In this study, we investigated a photovoltaic THz silicon metal–semiconductor field-effect transistor detector and the effect of varying its channel length. This study seeks to develop a physical model of the device that considers the impact of carrying the channel length on the operation of our model results and compares them with experimental data for other well-known FET detector models. Finally, the simulation results were interpreted using the proposed theory to provide an optimal design for a THz detector with a high response.