Room-temperature all-electrical ferromagnet-free spin injection, detection, and manipulation

Improving energy efficiency and operational speed are challenging in realizing integrated circuits. The spin parameter has been proposed as a practicable ideal means to the challenge by composing a spin field-effect transistor (spin FET). However, the need for magnetic or optical components in 2DEGs at low temperatures hinders the approach to a practicable spin-based integrated circuit. Here, we propose a novel all-electric spin FET in the heterostructure of graphene and T d -WTe 2 by employing alternative spin polarizers with transition metal dichalcogenides (TMDCs). Furthermore, we demonstrate all-electrical AND spin logic gate operation using two input gates to control the output spin Hall signal at room temperature. This novel approach demonstrates intrinsic properties of graphene and type-II Weyl semimetal T d -WTe 2 induced in the graphene heterostructure enable spin FET operation at room temperature. Our work suggests a new perspective on engineering state-of-the-art logic circuits for spin-based, energy-efficient, and fast data processing in graphene/TMDC heterostructures.