Superconducting diode effect in gradiently strained Nb0.5Ti0.5N films

The superconducting diode effect (SDE), combining superconductivity with diode-like nonreciprocal current flow, recently emerges as an ideal candidate for zero-dissipation electronic circuits. Such technologically advantageous diodes are achieved by intricate material engineering to disrupt inversion symmetry, which leads to the production challenges as well as a limited pool of viable materials. Here we exploit the gradient interfacial strain to experimentally induce the SDE in Nb0.5Ti0.5N films grown on MgO substrates. Additionally, the SDE is tunable with an in-plane magnetic field and can be further enhanced by introducing an interfacial anisotropic pinning potential. Our findings establish interfacial strain gradient as a versatile tool for creating and enhancing tunable SDE.