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Combining infrared absorption spectroscopy and theoretical calculations reveals the MgGa-VN complex in GaN, improving defect identification.
Infrared absorption spectroscopy is vital to identifying point defects in semiconductors, though it is challenged by complicated defect systems involving symmetry-broken multiatomic vibrations, based on traditional group-theory analysis. This work meets that challenge by combining polarization-resolved infrared spectroscopy with first-principles calculations of defect-vibration-induced dipole-moment variations (DMVs). Thus the authors are able to reveal the MgGa-VN complex in p-type GaN as a pertinent example, by determining the DMV for all three local vibrational modes, both experimentally and theoretically.
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Song et al. (2025) studied this question.
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