Confocal photoluminescence and x-ray photoelectron spectroscopy study of electron irradiation-induced fluorescence from oxidized porous 4H silicon carbide surface

A broad spectrum of green light emission from oxidized porous silicon carbide surfaces was found to be induced by electron beam irradiation. Using confocal microscopy, the spatial and spectral properties of the emission are studied. X-ray photoelectron spectroscopy, employed to further understand the mechanism of the emission, suggests that oxygen defect centers such as non-bridging oxygen hole centers or components such as Si–C–O were induced on the sample surface by electron beam irradiation and contributed to the light emission. Moreover, the intensity of the induced fluorescence can be controlled by varying the irradiation conditions. These induced emissions from the oxidized porous silicon carbide surface are of interest for optoelectronic and biological applications.