Impact of graphene encapsulation on thermodynamics of quantum emitters in hexagonal boron nitride

Color centers in hexagonal boron nitride (hBN) have gained significant interest as single-photon emitters and spin qubits for applications in a wide range of quantum technologies. As the integration of these solid-state quantum emitters into electronic devices necessitates electrical control, it is essential to gain a deeper understanding of the mechanisms for charge control of these defect color centers in hBN/graphene heterostructures. In this article, we show that screening due to the encapsulation of hBN by graphene modifies the electrical levels of hBN, leading to charge transfer. Furthermore, we show that the charged defects have low-energy barriers for defect reorientation which can be overcome by moderate gate voltages. This study shows that accurate modeling of the charge state of the defect is necessary to be able to electrically control defects.