This research demonstrates stable resistive switching in a Cu2−xS memristor, highlighting its potential for neuromorphic computing.
A Cu 2− x S based memristor fabricated at room temperature shows stable non-filamentary switching via Cu 2 S–CuS phase change, with low-voltage operation, high ON/OFF ratio, and potential for neuromorphic computing.
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Lee et al. (2025) studied this question.
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