Numerical analysis demonstrates the link between current density and UV irradiation in 4H-SiC devices, suggesting a new screening method for bipolar degradation.
We have proposed an E-V-C (Expansion-Visualization-Contraction) method by using UV irradiation, for screening potential defects which causes reliability issue called bipolar degradation in 4H-SiC devices. This method is based on the property that the REDG (recombination-enhanced dislocation glide) mechanism causing the bipolar degradation can be reproduced by UV irradiation. However, in order to apply this method as a screening, accurate quantification of the correlation between current density in forward bias and UV irradiance is required. This article describes how to set UV irradiation conditions (irradiance and irradiation time) to simulate forward biased current conditions.
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Igarashi et al. (2025) studied this question.
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