Effect of Zn Concentration on the UV Sensing Performance of Ni1−xZnxS Film Synthesized using Chemical Bath Deposition Technique

Ni 1− x Zn x S (x = 0.2, 0.4, 0.6, and 0.8) films are deposited on silicon substrates using the chemical bath deposition technique. This study focuses on the influence of Zn content on the electrical and UV sensing properties of Ni 1− x Zn x S based devices under UVA (≈365 nm) and UVC (≈260 nm) illumination. Current–voltage ( I–V ) characteristics of the device are linear under dark and UVC illumination, indicating ohmic conduction. Interestingly, under UVA illumination, space‐charge‐limited current leads to nonlinear I–V characteristics. All devices demonstrated good photoresponse characteristics with a response time of ≈1 s. Among all the devices, the one with the highest Zn concentration exhibits the best performance with a responsivity, external quantum efficiency and specific detectivity of 0.30 AW −1 , 101.92%, and 9.52 × 10 11 Jones, respectively under UVA illumination. For the same device under UVC illumination, a responsivity of 67.74 mAW −1 , EQE of 32.30% and specific detectivity of 3.02 × 10 11 Jones are recorded. Further the devices are found to be visible‐blind which highlights the promising use of these film‐based devices as selective UV sensors.