Engineering Charge Transfer Doping of MoSe2 Monolayers via Epitaxial Orientation-Dependent Surface Electron Accumulation in high-κ Dielectric Gd2O3 Thin Films

Kritika Ghosh; Avijit Dhara; Ahin Roy; Yukio Sato; Sajal Dhara; A. Fissel; J. Osten; Ayan Roy Chaudhuri

doi:10.1039/d5tc01580d

January 1, 2025Journal of Materials Chemistry C

Engineering Charge Transfer Doping of MoSe2 Monolayers via Epitaxial Orientation-Dependent Surface Electron Accumulation in high-κ Dielectric Gd2O3 Thin Films

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Key Points

Charge transfer doping effectively modulates carrier concentration in MoSe2 monolayers, improving physical properties.
This study employs Gd2O3 thin films as dielectric substrates, facilitating surface electron accumulation in MoSe2.
Controlling doping concentrations can lead to tailored electronic applications in two-dimensional materials.
The approach highlights the importance of epitaxial orientation in optimizing charge transport within TMDCs.

Implication

This research demonstrates charge transfer doping in MoSe2 monolayers via dielectric Gd2O3, suggesting enhanced control over electronic properties.

Abstract

Precise control over the doping concentrations of 2D transition metal chalcogenide (TMDC) monolayers (MLs) effectively tunes their physical properties for desired applications. Dielectric substrate surface charge transfer doping (SCTD) which modulates carrier concentration in TMDCs by...

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Cite This Study

Ghosh et al. (2025) studied this question.

synapsesocial.com/papers/68c1a40954b1d3bfb60de886 https://doi.org/10.1039/d5tc01580d

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Engineering Charge Transfer Doping of MoSe2 Monolayers via Epitaxial Orientation-Dependent Surface Electron Accumulation in high-κ Dielectric Gd2O3 Thin Films

Key Points

Implication

Abstract

Discussion

Cite This Study

Engineering Charge Transfer Doping of MoSe2 Monolayers via Epitaxial Orientation-Dependent Surface Electron Accumulation in high-κ Dielectric Gd2O3 Thin Films

Key Points

Implication

Abstract

Discussion

Cite This Study

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