A new tender XAFS system for characterization of organic thin films at SAGA Light Source

Sulfur K-edge XAFS measurements were performed to evaluate the molecular orientation of DNTT thin films and the local structure of DBTTT films. A new tender XAFS measurement system was developed and installed at beamline BL11 of the SAGA Light Source to enable reliable and high-throughput structural analysis of sulfur-containing organic semiconductor thin films and related materials. The system supports rapid, automated angle-dependent measurements using a motorized sample manipulator under a helium atmosphere (1 atm), without requiring vacuum. It is equipped with a conversion electron yield (CEY) electrode and a silicon drift detector (SDD) for partial fluorescence yield (PFY), enabling simultaneous detection with different surface sensitivities. Samples can be introduced without air exposure via a transfer vessel and load-lock chamber, allowing exchange in less than 5 minutes and acquisition of high-quality spectra in about 6 minutes. The new system contributes to improving the analytical capabilities for such materials.