This study demonstrates high extinction ratio EMLs improving bit error rates in 400G and 800G optical transmission, suggesting advancements for AI applications.
This study presents the chip- and transceiver-level performance data of high Extinction Ratio (ER) 100 Gb/s Electroabsorption Modulation Lasers (EMLs) for 400G & 800G artificial intelligence (AI) optical transmission and computing applications. Our 100 Gb/s EML demonstrates high extinction ratio, high output power, and low threshold current—features well-suited for four-level Pulse Amplitude Modulation (PAM4). The combination of high power and low threshold current also contributes to reduced power consumption at the module level. Additionally, the high extinction ratio helps achieve a low Bit Error Rate (BER), which is critical for 800G optical switches.
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Huang et al. (2025) studied this question.
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