Carrier Dynamics and Structural Analyses of Orange/Red In‐Rich InGaN Double‐Quantum Wells LED Hybridized by Blue InGaN Single‐Quantum Well

The carrier dynamics of orange/red LEDs incorporating In‐rich In 0.35 Ga 0.65 N/GaN double quantum well (DQW) structures are explored. The improved hybrid LED structure incorporates an In‐poor In 0.2 Ga 0.8 N single quantum well (SQW) alongside DQWs that are characterized by enhanced efficiency compared to the control LED comprises In 0.35 Ga 0.65 N/GaN DQWs solely. Advanced structural characterizations reveal a unique periodic V‐shaped accumulation of Al around threading dislocations (TDs) in the n‐AlGaN layer, providing insights into strain distribution around TDs. Advanced optical analyses unveil distinct carrier dynamics. Temperature‐ photoluminescence (PL), and time‐resolved PL reveal unusual behavior in In‐rich InGaN LEDs. Unlike blue In‐poor InGaN‐based LED, the In‐rich orange/red LED exhibited a sharp, step‐like energy shift accompanied by an abrupt change in the peak width within the intermediate temperature (160−200 K) range. Cathodoluminescence reveals that, in Hybrid LED, the orange/red emission is consistent around V‐pits/trenches, while a significant DQW damage occurs below these defects in Control LED, where AlInGaN is formed, resulting in blue emission. Reduced quantum‐confined Stark effect is observed in Hybrid LED, addressing key challenges in long‐wavelength nitride emitters. The blue SQW inclusion effectively suppresses non‐radiative recombination and serves as an efficient carrier reservoir for the active region, achieving a remarkable internal quantum efficiency (27.9%) for the Hybrid LED.