Resonator Width Optimization for Enhanced Performance and Bonding Reliability in Wideband RF MEMS Filter

This research investigates resonator width optimization for simultaneously enhancing electrical performance and mechanical reliability in wideband RF MEMS filters through systematic evaluation of three configurations: 0% (L1), 60% (L2), and 100% (L3) matching ratios between cap and bottom wafers using Au-Au thermocompression bonding. The study demonstrates that resonator width alignment significantly influences both electromagnetic field coupling and bonding interface integrity. The L3 configuration with complete width matching achieved optimal RF performance, demonstrating 3.34 dB insertion loss across 4.5 GHz bandwidth (25% fractional bandwidth), outperforming L2 (3.56 dB) and L1 (3.10 dB), while providing enhanced electromagnetic wave coupling and minimized contact resistance. Mechanical reliability testing revealed superior bonding strength for the L3 configuration, withstanding up to 7.14 Kgf in shear pull tests, significantly exceeding L1 (4.22 Kgf) and L2 (2.24 Kgf). SEM analysis confirmed uniform bonding interfaces with minimal void formation (~180 nm), while Q-factor measurements showed L3 achieved optimal loaded Q-factor (QL = 3.31) suitable for wideband operation. Comprehensive environmental testing, including thermal cycling (−50 °C to +145 °C) and humidity exposure per MIL-STD-810E standards, validated long-term stability across all configurations. This investigation establishes that complete resonator width matching between cap and bottom wafers optimizes both electromagnetic performance and mechanical bonding reliability, providing a validated framework for developing high-performance, reliable RF MEMS devices for next-generation communication, radar, and sensing applications.