This research demonstrates the electrical performance of a Punch Through Biased Silicon Drift Detector, highlighting crucial biases and electric field distributions.
This article proposes a novel Punch Through Biased Silicon Drift Detector (PTBSDD) based on the concentric ring silicon drift detector . The biasing resistor chain is ion-implanted and is therefore internal. The biasing resistor chain occupies a very small area of the SDD surface, and its design separates the bias electrode from the voltage dividing of the resistor chain. Using the semiconductor device simulation software Sentaurus TCAD, we conducted preliminary electrical performance research on this Punch Through Biased SDD and obtained the following results: (1) the potential and electric field distributions of the PTBSDD; (2) the changes in the electron concentration profile in the drift channel within the detector as the operating voltage of the detector changes; (3) a comparison of the voltage gradient at the punch-through resistance chain with the voltage gradient at the drift ring; and (4) the simulation of the instant induced current curves before and after irradiation with a Heavy Ion incident on the detector.
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Li et al. (2025) studied this question.
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