Whispering Gallery Modes in a Micro-Cavity Within a Single Sn-Doped CdS Nanowire Featuring a Regular Hexagonal Cross-Section

CdS nanowires have garnered considerable attention lately for their promising potential in next-generation nanolaser devices, attributed to their relatively high stability and exceptional emission efficiency within the Ⅱ–Ⅵ semiconductor family. In this study, tin-doped CdS nanowires with varying dimensions were synthesized, and the underlying mechanisms responsible for the formation of micro-cavities within these nanowires were systematically explored through scanning electron microscopy (SEM) analysis and photoluminescence mapping. The results show that a very distinct hexagonal-shaped micro-cavity is observed on the cross-section of CdS nanowires, and the size of the micro-cavity is determined by the radius of the nanowire. Additionally, through the use of angle-resolved micro-fluorescence Fourier imaging technology, it is found that under high excitation density conditions, the micro-cavity mode is more prominent at higher collection angles, which is consistent with the mode of the wall-pass cavity micro-cavity. Finally, the formation of the full reflection spectrum of the micro-cavity mode is confirmed through the wavelength shift and intensity shift phenomena related to the excitation power. These results further deepen our understanding of the micro-cavity modes in tin-doped cadmium sulfide nanowires, which may be of great significance for the application of these nanowires in new optical devices.