Domain-Selective 1D Moiré Engineering and Topological Transitions in Bilayer Graphene

One-dimensional (1D) moiré superlattices, generated via heterostrain, provide a unique platform for engineering electronic topology and correlated states beyond the conventional two-dimensional (2D) moiré paradigm. Unlike 2D moiré patterns, 1D moiré structures selectively include specific stacking configurations, enabling domain-level control over low-energy electronic properties. Using atomistic tight-binding simulations, we demonstrate that heterostrain applied in specific directions can eliminate metallic AA-stacking regions and induce robust band gaps. As the strain decreases, the system undergoes a sequence of insulator-metal-insulator transitions, with Dirac cone formation at a critical strain of ηc = 1.818%. Near this transition, we observe significant Fermi surface reconstructions, marked by van Hove singularities and Lifshitz transitions, and a sign reversal of both the Berry curvature and Berry curvature dipole. Our findings establish domain-selective 1D moiré engineering as a powerful approach for controlling low-energy physics, topology, and quantum phases in van der Waals heterostructures.