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September 16, 2025Applied Physics Letters0 citations

High Performance Double Barrier AlN Memristive Nonvolatile Memory Devices

High performance vertically integrated double barrier AlN memristive nonvolatile resistive random-access memory

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Authors

XLXian-Qin LiuHHHaijiao HarsanSZSiwen Zhang

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Overview

Demonstrates enhanced switching in AlN memristors with improved endurance and retention, indicating strong potential for nonvolatile applications.

Key Points

  • AlN memristors show a significant on/off ratio of 10^6, enhancing performance for nonvolatile memory applications.
  • Device structure optimization led to improved conduction mechanisms including Schottky emission in high resistance states.
  • The vertically integrated double barrier AlN memristor has demonstrated an endurance of 10^4 and a retention time of 10^5 seconds.
  • These advancements suggest a promising avenue for developing high-speed, nonvolatile memory solutions.

Cite This Study

Liu et al. (2025) studied this question.

synapsesocial.com/papers/68d4538731b076d99fa58b13https://doi.org/10.1063/5.0267634
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