Demonstration of MBE-grown, continuous-wave AlGaN-based UV-A lasers shows a threshold current density of 6 kA/cm2, indicating improved efficiency and performance.
We demonstrate the first MBE-grown, electrically pumped, continuous-wave AlGaN- based UV-A lasers with a tunnel junction, having a threshold current density of 6 kA/cm2 at a record- low applied voltage of 8 V at room temperature.
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Ghosh et al. (2025) studied this question.
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