Observational analysis increased silicon vacancy color-center yield in diamond, suggesting UV light enhances the process.
We show increase of silicon vacancy color-center yield following focused ion beam implantation of Si ions into a diamond substrate. The improvement is achieved by irradiating the sample with ultraviolet light during high-temperature annealing.
No takes yet. Share an insight, caveat, or question.
Cariker et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: