Versatile, strain-free, InP-based SESAMs with iron-doped InGaAs absorber for ultrafast lasers at 1560 nm

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This is a Experimental Study study.

Alexander Dohms; Steffen Breuer; Shahram Keyvaninia; Lars Liebermeister; Martin Schell; Robert B. Kohlhaas

doi:10.1364/cleo_at.2025.jps200_90

January 1, 2025

Versatile, strain-free, InP-based SESAMs with iron-doped InGaAs absorber for ultrafast lasers at 1560 nm

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Key Points

The InP-based SESAMs demonstrate adjustable ultrafast response, critical for effective pulse generation.
Iron-doped InGaAs absorbers contribute to low non-saturable losses, enhancing laser performance.
These SESAMs support essential features for ultrashort pulse generation at the 1560 nm wavelength.
The versatility of the design enables a broad range of applications in ultrafast laser technology.

Implication

Innovative SESAMs utilize iron-doped InGaAs absorbers for optimized ultrafast response and depth modulation.

Abstract

We present versatile, strain-free, InP-based SESAMs with iron-doped InGaAs absorber, which facilitate all critical requirements for ultrashort pulse generation at 1560 nm: adjustable ultrafast response and modulation depth as well as low non-saturable losses.

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Cite This Study

Dohms et al. (2025) studied this question.

synapsesocial.com/papers/68d463f131b076d99fa639ab https://doi.org/10.1364/cleo_at.2025.jps200_90

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Versatile, strain-free, InP-based SESAMs with iron-doped InGaAs absorber for ultrafast lasers at 1560 nm

Key Points

Implication

Abstract

Discussion

Cite This Study

Versatile, strain-free, InP-based SESAMs with iron-doped InGaAs absorber for ultrafast lasers at 1560 nm

Key Points

Implication

Abstract

Discussion

Cite This Study

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