Investigation shows hydrogen-doped indium oxide achieves 111 cm²/V-s optical mobility, indicating advantages over indium-tin-oxide.
We investigated hydrogen-doped indium oxide as a new epsilon-near-zero material compared with commercial indium-tin-oxide. Using RF-sputtering deposition and various characterization techniques, we achieved 111 cm 2 /V-s optical mobility and 112 cm 2 /V-s electric mobility.
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Bari et al. (2025) studied this question.
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