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This technology enhances the performance of surface-barrier detectors in radon radiometers, suggesting better cost efficiency and durability.
In the article the improved technology of manufacturing of surface-barrier detectors (SBD) on silicon of n-type conductivity, adapted for manufacturing of SBDs used in radon radiometers, is proposed. The detectors have light protection, stable characteristics under the accepted operating conditions, optimally meeting the requirements for operation in the device. The technology makes it possible to provide a high yield of year-old counters, which reduces their cost price. The possibility of manufacturing PBDs on thin silicon wafers rejected for further use in planar technology is shown.
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Lashaev et al. (2025) studied this question.
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