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September 23, 2025MicromachinesOpen Access

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact

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Authors

JDJiale DuHLHao LuBHBin Hou

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Overview

This research demonstrates improved power density and low dislocation density in GaN-on-Si HEMTs, suggesting enhanced reliability for RF applications.

Key Points

  • The GaN HEMTs achieved a maximum output power density of 10.2 W/mm at 8 GHz, highlighting their potential for RF applications.
  • Incorporating a low parasitic regrown ohmic contact resulted in the lowest contact resistance of 0.072 Ω·mm, improving device efficiency.
  • The devices displayed a peak transconductance of 391 mS/mm and a breakdown voltage of 169 V, indicating strong performance metrics.
  • Employing a two-step-graded transition structure minimized dislocation density, enhancing material quality for CMOS-compatible technologies.

Cite This Study

Du et al. (2025) studied this question.

synapsesocial.com/papers/68d4725631b076d99fa6b0dehttps://doi.org/10.3390/mi16091067
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