This research demonstrates a systematic method to improve indistinguishability in MoTe2 quantum emitters, suggesting enhanced telecom applications.
Single-photon sources operating in the telecom band are fundamental components for long-distance optical quantum communication and information processing. Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer a promising platform for such sources, but their development has been hindered by limited spectral range and poor single-photon indistinguishability. Here, we demonstrate a reproducible and systematic approach for generating near-infrared (1090-1200 nm) quantum emitters in bilayer MoTe₂ using deterministic strain and defect engineering. These emitters exhibit strong linear polarization (DOLP $>70%$), sub-nanosecond lifetimes (τ ~450 ps), high single-photon purity (g⁽²⁾(0)<0.1), and resolution-limited emission (~200 $μ$eV). Electrostatic biasing enables Stark tuning over a ~3 meV range, reduced photon bunching, and significantly shortened radiative lifetimes, yielding narrow emission with ratios of experimental to transform-limited linewidths as low as R~55. Most notably, two-photon interference measurements reveal a Hong-Ou-Mandel visibility of VHOM~10$%$, and up to VHOM~ 40$%$ with post-selection by temporal filtering, representing the highest reported indistinguishability for any TMD quantum emitters and the first such demonstration in the near-infrared regime. These results establish MoTe₂ as a viable platform for tunable, low-noise, high-purity single-photon sources with promising indistinguishability, paving the way for their integration into telecom-compatible quantum photonic technologies.
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Wyborski et al. (2025) studied this question.
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