Abstract We demonstrated a multi-fin normally-off β-Ga 2 O 3 vertical transistor with a breakdown voltage exceeding 10 kV, specific on-resistance of 289 mΩ·cm 2 , and power figure-of-merit of 0.35 GW/cm 2 . The vertical transistor was fabricated on a low-donor-concentration ( N d - N a ≈ 1.8×10 15 cm -3 ) and thick (thickness≈ 85 µm) epitaxial layer grown on a (011) β-Ga 2 O 3 substrate by halide vapor phase epitaxy to enhance the breakdown voltage. The breakdown voltage exceeding 10 kV is the highest reported for β-Ga 2 O 3 vertical transistors. This result indicates the great potential of Ga 2 O 3 vertical power devices.
Wakimoto et al. (2025) studied this question.