Spectroscopic ellipsometry explores dielectric properties in La2−xCexCuO4, revealing non-linear carrier concentration with Ce doping.
In recent decades, the application of high-throughput experimentation has significantly shortened the research period for materials science. However, there remains a critical gap in non-destructive, high-throughput characterization techniques. Spectroscopic ellipsometry (SE) is well-suitable to address this issue, allowing for a focused light spot. In this work, we employ SE to investigate the dielectric properties of an electron-doped cuprate superconductor, La2−xCexCuO4, with continuously varying Ce compositions from 0.1 to 0.19. The Drude fitting parameters from the ordinary part of dielectric tensor εo demonstrate that the free carrier concentration does not linearly increase with Ce doping, while the scattering rate does. In addition, the normalized resistivity values calculated by the Drude parameters are similar to those of the transport results. This work extremely broadens the SE horizon in high-throughput new tracks.
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Shi et al. (2025) studied this question.
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