Novel Ga-S-Compounds as Potential Single-Source MOCVD Precursors

New molecular Ga-S-compounds were synthesized following a straightforward and high-yielding alkane elimination path-way. The compounds were characterized using NMR and IR spectroscopy, mass spectrometry and elemental analysis. To validate an application potential as possible Single Source Precursors (SSP) for the Metal Organic Chemical Vapor Deposition (MOCVD) of GaS, their thermal properties were investigated using TGA/DSC experiments. Further, we determined the single crystal molecular structure of selected examples by XRD. Deposition and decomposition of selected SSPs on c-plane sapphire were investigated using TPD, XPS and AES, which confirm the formation of GaS containing layers.