Degradation Progress of Metallized Silicon Nitride Substrate Under Thermal Cycling Tests by Digital Image Correlation

Thermal cycling test is one of the reliability tests, which are important for metal-ceramic layered composites (metallized ceramic substrates), a part in power modules. Since thermal cycles are within a large range of temperature, the test has only been performed using a thermal chamber. It limited the understanding of degradation mechanism in metallized ceramics substrates. Among NDE techniques, Digital Image Correlation (DIC) is a simple and effective method, enhanced by modern digital imaging technologies, enabling precise measurements of displacement, strain, deformation, and defects with a simple setup. In this paper, we combined some of our previous work to make a review to present a full analysis of a silicon metallized substrate under thermal cycling test (from beginning to fail) using DIC method. The main content is the application of DIC in evaluating the reliability of metallized silicon nitride (AMB-SN) substrates under thermal cycling with temperatures from −40 °C to 250 °C. Three key aspects of the AMB-SN substrate are presented, including (i) thermal strain characteristics before and after delamination, (ii) warpage and dynamic bending behavior across damage states, and (iii) stress–strain behavior of constituent materials. The review provides insights into degradation progress of the substrate and the role of Cu in substrate failure, and highlights DIC’s potential in ceramic composites, offering a promising approach for improving reliability test simulations and advancing digital transformation in substrate evaluation, ultimately contributing to enhanced durability in high-power applications.