Production of GeOx Films at Different Oxygen Flow Rates and Different Annealing Temperatures and Examination of Energy Band Gaps using Kubelka Munk Method

In this study, GeOx films were grown on silicon substrates using the Radio Frequency (RF) Magnetron Sputtering method at different oxygen flow rates and annealing temperatures. The films were produced at a substrate temperature of 250°C and a working pressure of 13 mTorr. Subsequently, the films were annealed at temperatures of 300°C, 500°C, 600°C, 700°C, 900°C, and 1000°C. Total and diffuse reflection measurements were performed to investigate the optical properties of the films. Energy band gaps were determined using diffuse reflection measurements and they were calculated using the Kubelka-Munk method. It was observed that the energy band gap increased with increasing oxygen ratio. Additionally, annealing temperatures were found to cause changes in the energy band gaps.