Key points are not available for this paper at this time.
ZnMn 2−x Sn x O 4 specimens with x = 0.0, 0.03, 0.05, 0.07, 0.1 and 0.2 were obtained utilizing the sol-gel method. Rietveld refinement was employed to explore modifications in structural and microstructural features of the specimens upon Sn doping. Utilizing the SEM/EDS technique, the morphology and composition of the specimens were inspected. Inclusion of Sn ions into the ZnMn 2 O 4 (ZMO) lattice was evidenced by the EDS analysis and confirmed by the shift in the wavenumber of IR vibrational bands of both tetrahedral and octahedral sites. From photoluminescence (PL) measurements, the pristine ZMO specimen exhibited a peak emission at 547 nm, consistent with the bandgap value E g = 2.42 eV, recognized as edge-to-edge emissions. PL intensity diminished upon doping with Sn up to x = 0.07, then increases by increasing (x); for x = 0.2, it exceeds the peak of pure ZMO. The sample with x = 0.2 exhibited the ultimate dielectric and the greatest conductivity among other doped samples. The electrical conductivity of pure ZMO and samples with x = 0.1 adhered to the CBH model. Samples with x = 0.05 and 0.07 were characterized by the occurrence of both SP and CBH models. A sample with x = 0.2 demonstrated OLPT mechanism. The influence of the amount of Sn and temperature on the complex impedance and electric modulus were explored. All samples demonstrated a semiconductor feature except the sample with x = 0.07, which has metallic characteristics.
Heiba et al. (Mon,) studied this question.