PulseExploreJournal ClubResearchersJournals
Instagram
HomeJournal ClubExplore
Synapse
⌘+K
Synapse
September 13, 2024Advanced Materials Technologies

Self‐Rectifying Short‐Term Memory Phenomena Through Integration of TiOx Oxygen Reservoir and Al2O3 Barrier Layers for Neuromorphic System

View Full Paper
Ask AI
Bookmark
Share

Authors

HJHyeonseung JiSKSungjoon KimSKSungjun Kim

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ji et al. (2024) studied this question.

synapsesocial.com/papers/68e58930b6db643587525559https://doi.org/10.1002/admt.202400895
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Sophisticated Conductance Control and Multiple Synapse Functions in TiO<sub>2</sub>‐Based Multistack‐Layer Crossbar Array Memristor for High‐Performance Neuromorphic Systems2024 · 33 citations
  2. 2Exploring temporal dynamics of TiOx-based memristors for optimised robustness in neuromorphic computing2026
  3. 3Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems2024 · 3 citations
  4. 4Synapse Neurotransmitter Channel‐Inspired AlO<sub>x</sub> Memristor with “V” Type Oxygen Vacancy Distribution2024 · 5 citations
  5. 5Unipolar modulated volatile memristor: Achieving multi-scale plasticity, associative learning, and dynamic reservoir computing2026