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September 13, 2024MicromachinesOpen Access

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Guangyuan Jiang Peng Cui Fu Chen Yuanjie Lv Ming Yang Qianding Cheng Yang Liu Guangyuan Zhang

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Abstract

The small-signal S parameters of the fabricated double-finger gate AlGaN/GaN high electron mobility transistors (HEMTs) were measured at various direct current quiescent operating points (DCQOPs). Under active bias conditions, small-signal equivalent circuit (SSEC) parameters such as

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Cite This Study

Jiang et al. (2024) studied this question.

synapsesocial.com/papers/68e58a5ab6db6435875264a4 https://doi.org/10.3390/mi15091148

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