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Integrated power dividers (PDs) are essential in terahertz (THz) communication and radar systems, but miniaturization often leads to performance degradation due to fabrication inaccuracies and sharp bends. Topological photonics offers a solution to these issues, yet creating THz power dividers with arbitrary splitting ratios remains challenging. We present a design methodology for on-chip topological THz power dividers with customizable splitting ratios using valley-locked photonic crystals. These crystals feature a tri-layered structure with two distinct valley Chern number layers and an intermediate semimetal layer. Utilizing the Jackiw–Rebbi model, we show that the characteristic impedance of the valley-locked photonic crystals, and thus the power division ratio, can be tuned by adjusting the semimetal layer width. Our approach is validated through simulations and experiments for both equal (1:1) and unequal (4:9) power ratios. This method enables efficient navigation around sharp bends and robust THz on-chip connectivity.
Wang et al. (Mon,) studied this question.