Metal silicon phosphides have shown promise as nonlinear optical materials. To be practically useful and cheap, earth-abundant 3d transition metals are preferred over their scarcer and more expensive 4d and 5d counterparts. We developed a synthetic method to produce polycrystalline bulk powders and millimeter-sized single crystals of ternary compounds FeSi4P4 and CoSi3P3. Both studied compounds have noncentrosymmetric and chiral crystal structures with ordered Si/P arrangements as was confirmed by single-crystal X-ray diffraction and solid-state NMR. Despite the presence of the transition metal, FeSi4P4 and CoSi3P3 are semiconductors with direct band gaps of 1.3 and 1.6 eV, respectively, indicating low-spin d6 electronic configuration for octahedral Fe2+ and Co3+. Relative to reported sulfide materials, FeSi4P4 and CoSi3P3 small band gap semiconductors demonstrate an outstanding combination of second-harmonic generation (SHG) activity and laser damage threshold (LDT). Both studied materials are phase-matchable with a 2.09 μm laser and not only exhibit 2.5–3.0 times stronger SHG signal than that of the state-of-the-art AgGaS2 standard but also demonstrate an LDT response of 2.3–2.5 times higher than that of AgGaS2 (at 1.09 μm laser with a pulse width of 10 ns)─which is unprecedented for small band gap semiconductors.
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Soto et al. (2024) studied this question.
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