In this article, we propose a set of new expressions of four noise parameters for InP high electron mobility transistor (HEMT) devices based on PRC noise equivalent circuit model. The effects of gate‐to‐drain capacitance, drain‐to‐source conductance as well as extrinsic resistances have been taken into account. High consistency between measured and modeled noise parameters for 70 nm HEMT with 2 × 30 μm gate width in the frequency range 8–50 GHz are given by the expressions. Great usability is demonstrated for determination of small signal and noise model parameters extraction.
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Lyu et al. (2024) studied this question.
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