Enhanced electroluminescence from SnO2 nanocrystals/Er3+ co-doped silica thin film via Yb3+ doping

We prepared Yb 3+ doped SiO 2 -SnO 2 :Er 3+ films by sol-gel method in order to develop the high-efficient rare-earth light emitting devices. The enhanced characteristic near-infrared photoluminescence related to Er 3+ ions was achieved as usual since the introduction of Yb 3+ ions is equivalent to adding a new energy transfer channel. We further designed and fabricated the electroluminescent device based on SiO 2 -SnO 2 :Er 3+ /Yb 3+ films. Interestingly, we demonstrated the significant enhancement of the near-infrared electroluminescence of Er 3+ ions. Compared with the electroluminescent device without Yb 3+ ions, the near-infrared electroluminescence integrated intensity of the Er 3+ /Yb 3+ co-doped one is enhanced by more than 12 times. Our electroluminescent devices also exhibited good operating stability, which has great potential for the development of stable silicon-based light sources.