Abstract A rather simple compact multifilamentary circuit model of bipolar memristor resistive switching with controlled multilevel conductivity tuning in a metal oxide memristor is presented. The model differs from known circuit level models by simpler equations for current and state variable. Comparing to other papers, the total number of fitting parameters grows slower with an increase in filaments number. This corresponds to a faster and easier fitting process. The model was implemented in the SPICE code. The simple equivalent circuit of the memristor element will allow to reduce signal processing simulation time in large memristor arrays in comparison with circuits based on known compact models with one and several filaments.
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Busygin et al. (2024) studied this question.
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