Defect engineering in transition metal oxides semiconductors (TMOs) is attracting considerable interest due to its potential to enhance conductivity by intentionally introducing defects that modulate the electronic structures of the materials. However, achieving a comprehensive understanding of the relationship between micro-structures and electromagnetic wave absorption capabilities remains elusive, posing a substantial challenge to the advancement of TMOs absorbers. The current research describes a process for the deposition of a MoO
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Wang et al. (2024) studied this question.
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