Orientation-dependent surface radiation damage in -Ga2O3 explored by multiscale atomic simulations

Ultrawide bandgap semiconductor -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage under extreme conditions. In this study, we investigate the orientation-dependent mechanisms of radiation damage on four experimentally relevant -Ga2O3 surface facets, namely, (100), (010), (001), and (-201), at various temperatures. We employ a multiscale atomic simulation approach, combining machine-learning-driven molecular dynamics (ML-MD) simulations and density functional theory (DFT) calculations. The results reveal that Ga vacancies and O interstitials are the predominant defects across all four surfaces, with the formation of many antisite defects GaO and few OGa observed. Among the two Ga sites and three O sites, the vacancy found in the O2 site is dominant, while the interstitials at the Ga1 and O1 sites are more significant. Interestingly, the (010) surface exhibits the lowest defect density, owing to its more profound channeling effect leading to a broader spread of defects. The influence of temperature on surface irradiation damage of -Ga2O3 should be evaluated based on the unique crystal surface characteristics. Moreover, the formation energy and defect concentration calculated by DFT corroborate the results of the MD simulations. Comprehending surface radiation damage at the atomic level is crucial for assessing the radiation tolerance and predicting the performance changes of -Ga2O3-based device in high-radiation environments.