Photoelectric conversion performance of Ga0.47In0.53As/Ge0.79Sn0.21 dual-junction thermophotovoltaic cell

Abstract Based on the photovoltaic characteristics of GeSn-based materials and the theory of stacked solar cells, Ga 0.47 In 0.53 As/Ge 0.79 Sn 0.21 dual-junction thermophotovoltaic cell has been simulated and studied for the first time. According to existing experimental material parameters, the structure of the cell is optimized, and the photoelectric performance of the cell is profoundly studied. The findings indicate that the doping concentrations of the top/bottom cell are N a(d),t / N a(d),b = 50(7) × 10 16 /17(2) × 10 19 cm −3 , which exhibits superior photoelectric conversion performance. For reducing material consumption and achieving high performance, the thickness of the emitter (base) of the top/bottom cell can be selected as 0.8~2.0(2.0~4.0)/0~0.2(1.0~4.0) μm ( T BB = 1500 K). With radiator temperatures increasing, the conversion efficiency of the cell significantly improves, and the open circuit voltage of the cell can reach 0.70~0.91 V (1000~2000 K). The research results can guide the design and fabrication of high-efficiency and economical GeSn-based multi-junction thermophotovoltaic cells, and can also provide a new research and development direction for low-cost thermophotovoltaic cells.