Analytical Modeling of Contact Resistance and Recombination for Silicon Heterojunction Solar cells using Hybrid Carrier Selective Passivating Contacts

Silicon heterojunction solar cells using Carrier Selective Passivating Contacts (CSPC) are the potential contenders for high efficiency next generation photovoltaics. Besides numerical simulations, the mathematical analysis of parameters affecting the performance of these cells is gaining considerable attention. In this work, the factors affecting the selectivity of silicon heterojunction solar cell using Hybrid Carrier Selective Passivating Contacts (H-CSPC) are investigated. This includes the evaluation of contact resistance and recombinations in the device. The contact resistance is analyzed in terms of partial resistances wherein an equivalent resistance model for the cell using H-CSPC is devised and resistances are inspected using quasi fermi level collapse over the contacts. The selectivity of the cell at each contact is examined and the condition for maximum selectivity is derived. Further, the recombinations in different regions of the cell using H-CSPC are analyzed. The recombinations at the TiO 2 /c-Silicon interface strongly deteriorate the V oc of the cell which is quantified using an analytical model under interface defect constraints and the results obtained are compared with simulations.