Comparison of electronic stopping powers of 4H-SiC and 2H-GaN for low-velocity <0001> channeled ions with atomic numbers of 12 to 15

Measured electronic stopping powers along the 〈0001〉 direction ( S e ) of 4H-SiC and 2H-GaN for low-velocity 12 Mg, 13 Al, and 15 P ions were reproduced with the modified El-Hoshy−Gibbons model that reduced not only the atomic numbers of projectiles and targets but also the impact parameter for small-angle collisions (based on the Kohn−Sham radii of projectiles) in the Firsov model. Unreported S e of 2H-GaN for low-velocity 14 Si ions was then predicted to be between S e of 2H-GaN for 12 Mg ions and S e of 4H-SiC for 13 Al ions, indicating not only Al and Mg but also Si channeling being usable for fabricating cost-effective superjunctions.