Two-level Stacked Nanowire MOSFETs: A Low Temperature Analysis of the Low-Field Mobility Degradation Factors

This study explores the carrier mobility and its degradation factors in relation to temperature for 2-level stacked nanowire MOSFETs within the temperature range of 100 K to 400 K. The low-field carrier mobility and its degradation factors were extracted using the Y-function. Additionally, it was observed that the peak transconductance is achieved at a higher overdrive voltage (VG-VTH), particularly as the temperature decreases. Notably, the low-field mobility is more sensitive in wider devices. Compared to other technologies such as omega-gate nanowires and planar fully depleted SOI transistors, this technology exhibits less sensitivity of low-field mobility to temperature variations. The first-order degradation factor was observed to decrease with rising temperature, while the second-order factor exhibited an increase within the same temperature range. The variation in the first and second order degradation factors with temperature is more pronounced in wider devices.