Research on channel-exposed carbon-based FET humidity sensor

The ability to detect humidity is crucial for a variety of sectors, including industrial manufacturing, meteorological surveillance, and the preservation of materials, among others. Field effect transistor (FET) based sensor, renowned for its signal amplification effect, plays a pivotal role in detecting trace-level analytes with high sensitivity. Our work demonstrates the preparation of a humidity sensor based on carbon-based FET architecture, employing micro-nano processing techniques. In this work, semiconducting carbon nanotubes serve as the sensing material and channel at the same time. The outcomes indicate that the sensor exhibits a linear response ranging from 0% to 80% relative humidity (RH) and good repeatability. It also shows long-term stability in a 40-day test, proving potential applications in FET-type humidity sensors.