Abstract In this article Part 2 of this series of articles, the methodology proposed in Part 1, namely, the fitting to a polynomial of the current minus the short-circuit current, i.e., \(I-{I}sc\), to calculate the Co-Content function \((CC(V,I))\) and extract the five solar cell parameters, i.e., the shunt resistance \(({R}ₛₕ)\), the series resistance \(({R}ₛ)\), the ideality factor \((n)\), the light current \(({I}lig)\), and the saturation current \(({I}ₛₐₜ)\), (within the one-diode solar cell model), is implemented on reported Current-Voltage (IV) curves found in the literature, both for laboratory made solar cells, as for and single-crystalline silicon (x-Si), multi-crystalline silicon (m-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), amorphous silicon (a-Si) tandem and triple-junction, amorphous silicon/crystalline silicon, heterojunction with intrinsic thin-layer (HIT), and amorphous silicon/microcrystalline silicon photovoltaic modules.
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Victor-Tapio Rangel-Kuoppa (2024) studied this question.
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