Silicon photonics is emerging as a key technology for developing radiation-tolerant optical transceivers. In this work, we present the electro-optical characterization of two radiation-hardened shallow-etched Mach–Zehnder modulators with different doping configurations when exposed to 1.2 Grad(SiO2) total ionizing dose. The trade-offs between radiation hardness and nominal performance metrics are highlighted to provide insights for optimizing SiPh devices for high-energy physics applications.
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Cammarata et al. (2024) studied this question.
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