Molecular Layering of an Additive Layer of Silicon Dioxide on Anodized Tantalum and Niobium Oxides

The results of studying the processes of formation of nanolayers of silicon oxide by the method of molecular layering (atomic layer deposition) on the surface of films of tantalum and niobium oxides obtained by electrochemical oxidation of the corresponding metals are presented. A study of the electrical strength of metal-dielectric-metal (MDM) structures based on tantalum and niobium oxides showed that the introduction of an additive dielectric layer (SiO2) can significantly increase the electrical strength of these structures.