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Stabilization of multiple polarization states at the atomic scale is pivotal for realizing high-density memory devices beyond prevailing bistable ferroelectric architectures. Here, we show that two-dimensional ferroelectric SnS or GeSe is able to revive and stabilize the ferroelectric order of three-dimensional ferroelectric BaTiO
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Zhang et al. (Fri,) studied this question.
synapsesocial.com/papers/68e613c2b6db6435875a6a59 — DOI: https://doi.org/10.1021/acs.nanolett.4c02041
Chuan-Bao Zhang
Sinopec (China)
Shunhong Zhang
University of Science and Technology of China
Ping Cui
University of Science and Technology of China
Nano Letters
University of Science and Technology of China
Hefei National Center for Physical Sciences at Nanoscale
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